Evolution of phases and their thermal stability in Ge–Sn nanofilms: a comprehensive in situ TEM investigation

The group IV Ge–Sn system is a promising candidate for variety of electronic and photonic applications due to its tunable bandgap compatibility with Si-based technology. However, the peculiarities components interaction, phases evolution and, especially, their thermal stability are still far from brimming comprehension. In course in situ TEM heating experiments, we demonstrate high potential using nanosized, layered Sn/amorphous-Ge films synthesis solid solutions an enhanced Sn content. Particularly, observe formation highly uniform, diamond structured Ge1-xSnx solution content 33 at% by metal-induced crystallization (MIC) at 90 °C. Ge0.67Sn0.33 alloy stable range 20–150 °C, whereat additional leads partial segregation subsequent melting Sn-rich phase. metastable liquid phases, which was observed 150–190 respectively, has key role stability. temperatures complex interphase interactions discussed frame size effects nanoscaled structures.